IRFHS9351TRPBF International Rectifier, IRFHS9351TRPBF Datasheet - Page 6
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IRFHS9351TRPBF
Manufacturer Part Number
IRFHS9351TRPBF
Description
MOSFET 2P-CH 30V 2.3A PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFHS9351TRPBF.pdf
(8 pages)
Specifications of IRFHS9351TRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
170 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
2.4V @ 10µA
Gate Charge (qg) @ Vgs
3.7nC @ 10V
Input Capacitance (ciss) @ Vds
160pF @ 25V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Dual
Transistor Polarity
Dual P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 2.3 A
Power Dissipation
1.4 W
Gate Charge Qg
1.9 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Fig 17a. Unclamped Inductive Test Circuit
6
Fig 16a. Gate Charge Test Circuit
0
R
-V
-20V
G
V DS
GS
Fig 18a. Switching Time Test Circuit
t p
≤ 0.1 %
≤ 1
I AS
20K
1K
D.U.T
0.01 Ω
L
S
S
DRIVER
DUT
L
15V
+
V DD
-
A
VCC
Id
Fig 16b. Gate Charge Waveform
V
10%
90%
V
Fig 17b. Unclamped Inductive Waveforms
GS
DS
Vgs
Fig 18b. Switching Time Waveforms
I
AS
t
d(on)
Qgodr
t
r
t p
Qgd
V
t
Qgs2
(BR)DSS
d(off)
www.irf.com
Vgs(th)
Vds
Qgs1
t
f