STL140N4LLF5 STMicroelectronics, STL140N4LLF5 Datasheet
STL140N4LLF5
Specifications of STL140N4LLF5
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STL140N4LLF5 Summary of contents
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... High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Description The STL140N4LLF5 is an N-channel STripFET™V Power MOSFET which has been designed to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Table 1. Device summary ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/ Doc ID 17586 Rev 1 STL140N4LLF5 ...
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... STL140N4LLF5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (continuous (3) I Drain current (continuous (3) I Drain current (pulsed) DM (1) P Total dissipation at T TOT (2) P Total dissipation at T TOT ...
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... Test conditions f=1 MHz = 4 (see Figure 3) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain Parameter Test conditions V = =4.7 Ω (see Figure 2) Doc ID 17586 Rev 1 STL140N4LLF5 Min. Typ 250 µ 0.0021 0.00275 0.0024 0.0031 D Min. Typ. Max. 5900 - 870 130 = TBD ...
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... STL140N4LLF5 Table 8. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Parameter Test conditions ...
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... Switching times test circuit for resistive load Figure 4. Test circuit for inductive load switching and diode recovery times Figure 6. Unclamped inductive waveform 6/10 Figure 3. Gate charge test circuit Figure 5. Unclamped inductive load test circuit Figure 7. Switching time waveform Doc ID 17586 Rev 1 STL140N4LLF5 ...
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... STL140N4LLF5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK® trademark. Doc ID 17586 Rev 1 Package mechanical data ® ...
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... Doc ID 17586 Rev 1 STL140N4LLF5 inch. Min. Typ. Max. 0.031 0.32 0.036 0.0007 0.0019 0.007 0.013 0.015 0.018 0.196 0.187 0.163 0.165 0.167 0.236 ...
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... STL140N4LLF5 5 Revision history Table 10. Document revision history Date 03-Jun-2010 Revision 1 First release. Doc ID 17586 Rev 1 Revision history Changes 9/10 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 17586 Rev 1 STL140N4LLF5 ...