STL140N4LLF5 STMicroelectronics, STL140N4LLF5 Datasheet - Page 5

• Manufacturer Part Number: STL140N4LLF5
• Description: MOSFET N-CH 40V 32A POWERFLAT5X6
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL140N4LLF5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.75 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 140A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5900pF @ 25V
• Power - Max: 4W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (5x6)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 140A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.0021ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 80W
• Operating: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0021 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 22 V
• Continuous Drain Current: 140 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10879-2

STL140N4LLF5
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 17586 Rev 1
I
I
di/dt = 100 A/µs,
V
SD
SD
DD
= 32 A, V
= 32 A,
Test conditions
= 25 V
GS
=0
Electrical characteristics
Min
-
-
-
-
Typ.
TBD
TBD
TBD
Max
1.1
18
72
Unit
nC
ns
A
A
V
A
5/10