FDG410NZ Fairchild Semiconductor, FDG410NZ Datasheet - Page 4

• Manufacturer Part Number: FDG410NZ
• Description: MOSFET N-CH SINGLE 20V SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG410NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 535pF @ 10V
• Power - Max: 380mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
Typical Characteristics
0.01
0.1
10
Figure 7.
1
5
4
3
2
1
0
0.01
100
0.1
0
10
1
10
I
D
Figure 9. Forward Bias Safe
= 2.2 A
-4
THIS AREA IS
LIMITED BY r
1
V
Gate Charge Characteristics
DS
V
0.1
DD
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
= 10 V
Q
SINGLE PULSE
T
R
T
g
2
J
A
θ
, GATE CHARGE (nC)
V
JA
= MAX RATED
= 25
DS(on)
10
GS
V
= 333
-3
DD
= 4.5 V
o
C
= 5 V
Figure 11. Single Pulse Maximum Power Dissipation
o
1
3
C/W
T
J
V
= 25 °C unless otherwise noted
DD
4
= 15 V
10
10
-2
5
10 ms
100 ms
0.1 ms
1 ms
10 s
1 s
DC
100
6
10
t, PULSE WIDTH (sec)
-1
SINGLE PULSE
R
T
4
A
θ
JA
= 25
Figure 10.
= 333
o
C
1000
o
10
10
10
C/W
100
10
10
10
10
1
-1
-3
-5
5
3
1
0.1
0
f = 1 MHz
V
Figure 8.
GS
V
GS
Gate Leakage Current vs Gate to Source
= 0 V
= 0 V
2
V
V
DS
GS ,
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
GATE TO SOURCE VOLTAGE (V)
Capacitance vs Drain
4
10
T
J
Voltage
= 125
1
6
o
C
8
100
T
J
= 25
10
o
C
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10
12
C
C
C
rss
oss
iss
1000
20
14