FDT3N40TF Fairchild Semiconductor, FDT3N40TF Datasheet
FDT3N40TF
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FDT3N40TF Summary of contents
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... Symbol * R Thermal Resistance, Case-to-Sink Typ. JA * Surface Mounted on JESD51-3 Board, T<0.1sec. ©2009 Fairchild Semiconductor Corporation FDT3N40 Rev. A Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...
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... Package Marking and Ordering Information Device Marking Device FDT3N40 FDT3N40TF Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS T / Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse ...
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Typical Performance Characteristics Figure 1. On-Region Characteristics Top : 15.0 V 10.0 V 8.0 V 7 6.0 V Bottom : 5 ...
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Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area Limited by R ...
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Unclamped Inductive Switching Test Circuit & Waveforms FDT3N40 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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FDT3N40 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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Mechanical Dimensions FDT3N40 Rev. A SOT-223 7 www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FlashWriter Auto-SPM™ FPS™ Build it Now™ F-PFS™ CorePLUS™ FRFET CorePOWER™ ...