FDT3N40TF Fairchild Semiconductor, FDT3N40TF Datasheet - Page 3

• Manufacturer Part Number: FDT3N40TF
• Description: MOSFET N-CH 400V 2A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDT3N40TF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 225pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDT3N40 Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
10
15
14
13
12
11
10
350
300
250
200
150
100
10
10
50
9
8
7
6
5
4
3
2
1
0
-1
-2
1
0
10
10
0
Drain Current and Gate Voltage
-1
-1
Top :
Bottom : 5.5 V
15.0 V
10.0 V
1
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
C
C
C
oss
iss
rss
V
V
DS
DS
2
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
10
0
0
V
3
GS
= 10V
C
C
C
4
iss
oss
rss
= C
= C
= C
V
gs
gd
10
ds
* Note : T
GS
+ C
10
+ C
1
* Notes :
= 20V
1. 250
2. T
1
gd
gd
(C
C
5
* Note :
ds
= 25
J
1. V
2. f = 1 MHz

= shorted)
= 25
s Pulse Test
o
GS
C
o
C
= 0 V
6
3
10
10
10
10
10
1
0
-1
1
0
0.2
4
12
10
8
6
4
2
0
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
0
Figure 6. Gate Charge Characteristics
0.4
25
Variation vs. Source Current
5
o
C
150
150
0.6
o
1
C
o
C
V
V
GS
25
SD
and Temperatue
0.8
Q
6
, Gate-Source Voltage [V]
o
, Source-Drain voltage [V]
C
G
, Total Gate Charge [nC]
V
V
V
DS
DS
DS
= 80V
= 200V
= 320V
2
1.0
-55
7
o
C
1.2
3
1.4
8
* Notes :
* Notes :
1. V
2. 250
1. V
2. 250
1.6
* Note : I
GS
DS

= 0V

4
= 40V
9
s Pulse Test
s Pulse Test
D
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= 2A
1.8
10
2.0
5