FDFMJ2P023Z Fairchild Semiconductor, FDFMJ2P023Z Datasheet

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FDFMJ2P023Z

Manufacturer Part Number
FDFMJ2P023Z
Description
MOSFET P-CH DUAL 20V 6-MLP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDFMJ2P023Z

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
112 mOhm @ 2.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
6.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
400pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
FDFMJ2P023Z Rev.B
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDFMJ2P023Z
Integrated P-Channel PowerTrench
–20V, –2.9A, 112mΩ
Features
MOSFET
Schottky
V
V
I
P
T
V
I
R
R
D
O
J
DS
GS
D
RRM
θJA
θJA
Max r
Max r
Max r
Max r
Low gate charge, high power and current handline capability
HBM ESD protection level > 1.5KV typical (Note 3)
V
RoHS Compliant
, T
F
Symbol
Device Marking
STG
< 400mV @ 100mA
DS(on)
DS(on)
DS(on)
DS(on)
.P23
Pin 1
= 112mΩ at V
= 160mΩ at V
= 210mΩ at V
= 300mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
SC-75 MicroFET
NC
C
A
A
GS
GS
GS
GS
FDFMJ2P023Z
= –4.5V, I
= –2.5V, I
= –1.8V, I
= –1.5V, I
S
S
D
-Continuous
-Pulsed
Device
G
D
D
D
D
= –2.9A
= –2.4A
= –2.1A
= –1.0A
T
A
= 25°C unless otherwise noted
Parameter
SC-75 MicroFET
Package
1
®
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features a MOSFET with low
on-state resistance and an independently connected low forward
voltage schottky diode for minimum conduction losses.
The SC-75 MicroFET package offers exceptional thermal
performance for it’s physical size and is well suited to linear mode
applications.
MOSFET and Schottky Diode
Reel Size
A
S
G
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
1
2
3
TO BOTTOM
TO BOTTOM
Tape Width
8 mm
–55 to +150
Ratings
–2.9
182
–20
–12
1.4
0.7
±8
30
89
1
August 2007
6
4
5
NC
A
S
www.fairchildsemi.com
3000 units
Quantity
°C/W
Units
°C
W
V
V
A
V
A
tm

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FDFMJ2P023Z Summary of contents

Page 1

... Package Marking and Ordering Information Device Marking Device .P23 FDFMJ2P023Z ©2007 Fairchild Semiconductor Corporation FDFMJ2P023Z Rev.B ® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other = –2.9A D ultra-portable applications ...

Page 2

... Drain-Source Diode Characteristics I Maximum Continuous Drain-Source Diode Forward Current S V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2007 Fairchild Semiconductor Corporation FDFM2P023Z Rev 25°C unless otherwise noted J Test Conditions I = –250µ –250µA, referenced to 25°C ...

Page 3

... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2007 Fairchild Semiconductor Corporation FDFM2P023Z Rev 25°C unless otherwise noted ...

Page 4

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 12 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX - - GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDFM2P023Z Rev 25°C unless otherwise noted -2. - -1.8V GS µ -1. 100 125 150 ...

Page 5

... GATE TO SOURCE VOLTAGE ( Figure 9. Gate Leakage Current vs Gate to Source Voltage 125 0 0.01 0.001 0.0 0.2 0.4 0.6 V FORWARD VOLTAGE(V) F, Figure 11. Schottky Diode Forward Voltage ©2007 Fairchild Semiconductor Corporation FDFM2P023Z Rev 25°C unless otherwise noted J 1000 0.8 1.0 1.2 Figure 12. ...

Page 6

... Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0. 182 θ JA 0.005 - ©2007 Fairchild Semiconductor Corporation FDFM2P023Z Rev 25°C unless otherwise noted PULSE WIDTH ( RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve 6 SINGLE PULSE o ...

Page 7

... Dimensional Outline and Pad Layout ©2007 Fairchild Semiconductor Corporation FDFM2P023Z Rev.B 7 www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...

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