FDFMJ2P023Z Fairchild Semiconductor, FDFMJ2P023Z Datasheet - Page 6

• Manufacturer Part Number: FDFMJ2P023Z
• Description: MOSFET P-CH DUAL 20V 6-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMJ2P023Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 112 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 6.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 400pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
FDFM2P023Z Rev.B
Typical Characteristics
0.005
100
0.01
0.5
10
0.1
10
1
1
2
10
-4
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
10
θ
10
JA
-3
-3
= 182
Figure 13. Single Pulse Maximum Power Dissipation
o
C/W
T
Figure 14. Transient Thermal Response Curve
J
= 25°C unless otherwise noted
10
10
-2
-2
t, RECTANGULAR PULSE DURATION (s)
t, PULSE WIDTH (s)
10
10
-1
-1
6
10
10
0
0
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
10
= P
1
1
DM
x Z
P
θJA
DM
1
/t
x R
2
SINGLE PULSE
R
T
θJA
A
θ
JA
10
V
t
= 25
1
+ T
10
GS
= 182
2
t
2
2
A
o
= -4.5V
C
o
C/W
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10
10
3
3