FDMS7672AS Fairchild Semiconductor, FDMS7672AS Datasheet
FDMS7672AS
Specifications of FDMS7672AS
Available stocks
Related parts for FDMS7672AS
FDMS7672AS Summary of contents
Page 1
... Device Marking Device FDMS7672AS FDMS7672AS ©2009 Fairchild Semiconductor Corporation FDMS7672AS Rev.C ® TM SyncFET General Description The FDMS7672AS has been designed to minimize losses power conversion application. Advancements in both silicon and = package technologies have been combined to offer the lowest r DS(on) DS(on) device has the added benefit of an efficient monolithic Schottky body diode ...
Page 2
... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. ° based on starting mH N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7672AS Rev °C unless otherwise noted J Test Conditions mA mA, referenced to 25 ° ...
Page 3
... JUNCTION TEMPERATURE ( T J Figure 3. Normalized On- Resistance vs Junction Temperature 90 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5% MAX GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS7672AS Rev °C unless otherwise noted J PULSE DURATION = 80 µ s DUTY CYCLE = 0.5% MAX 1.5 2 100 125 150 125 ...
Page 4
... Switching Capability 300 100 10 THIS AREA IS 1 LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS7672AS Rev °C unless otherwise noted 100 100 3000 1000 100 µ s ...
Page 5
... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE R 0.0001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS7672AS Rev °C unless otherwise noted 125 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK T ...
Page 6
... MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7672AS di/dt = 300 TIME (ns) Figure 14. FDMS7672AS SyncFET body diode reverse recovery characteristic FDMS7672AS Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device µ ...
Page 7
... Dimensional Outline and Pad Layout FDMS7672AS Rev.C 7 www.fairchildsemi.com ...
Page 8
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS7672AS Rev.C FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...