FDMS7672AS Fairchild Semiconductor, FDMS7672AS Datasheet - Page 6

• Manufacturer Part Number: FDMS7672AS
• Description: MOSFET N-CH 30V SYNCFET POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7672AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 2820pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 m Ohms
• Forward Transconductance Gfs (max / Min): 97 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 42 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7672AS Rev.C
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7672AS.
diode reverse recovery characteristic
Figure 14. FDMS7672AS SyncFET body
20
15
10
-5
5
0
0
30
60
TIME (ns)
di/dt = 300 A/
(continued)
90
µ
s
120
150
6
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
-2
-3
-4
-5
-6
0
5
V
DS
10
, REVERSE VOLTAGE (V)
T
T
T
J
J
J
= 125
= 100
= 25
15
o
o
o
C
C
C
20
www.fairchildsemi.com
25
30