FDD5N50NZFTM Fairchild Semiconductor, FDD5N50NZFTM Datasheet - Page 4

• Manufacturer Part Number: FDD5N50NZFTM
• Description: MOSFET N-CH 500V DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDD5N50NZFTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.85A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD5N50NZF Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
1.15
1.10
1.05
1.00
0.95
0.90
0.01
0.1
20
10
1
-75 -50
1
Operation in This Area
is Limited by R
vs. Temperature
vs. Case Temperature
T
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
0.01
10
0
0.1
DS(on)
2
1
10
*Notes:
0.05
-5
0.5
1. T
2. T
3. Single Pulse
0.2
0.02
0.01
Single pulse
0.1
C
J
= 150
= 25
50
o
DC
C
o
10ms
100
C
Figure 11. Transient Thermal Response Curve
1ms
*Notes:
10
1. V
2. I
[
100
o
-4
100
C
D
]
GS
= 250
µ
s
= 0V
30
Rectangular Pulse Duration [sec]
µ
µ
A
1000
s
150
(Continued)
10
-3
4
10
Figure 10. Maximum Drain Current
-2
5
4
3
2
1
0
25
*Notes:
1. Z
2. Duty Factor, D= t
3. T
P
DM
θ
JM
JC
50
- T
(t) = 2
T
C
10
C
, Case Temperature
= P
t
-1
1
o
t
C/W Max.
2
DM
75
* Z
1
θ
/t
JC
2
(t)
100
1
[
o
C
]
125
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150