FDMC7692 Fairchild Semiconductor, FDMC7692 Datasheet - Page 3

• Manufacturer Part Number: FDMC7692
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7692

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 13.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1680pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.5 mOhms
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC7692 Rev.C
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
40
30
20
10
Figure 3. Normalized On- Resistance
0
0
Figure 1.
-75
1
0
Figure 5. Transfer Characteristics
I
V
D
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
DS
= 13.3 A
-50
= 10 V
vs Junction Temperature
= 5 V
T
V
V
-25
J
DS
GS
On-Region Characteristics
,
JUNCTION TEMPERATURE (
2
V
1
V
V
V
, GATE TO SOURCE VOLTAGE (V)
,
GS
GS
GS
GS
DRAIN TO SOURCE VOLTAGE (V)
T
J
= 4 V
= 10 V
= 6 V
= 4.5 V
0
= 150
25
o
C
P
s
2
3
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
J
= 25 °C unless otherwise noted
T
J
75
= -55
T
J
= 25
o
100 125 150
4
3
C )
o
V
C
V
GS
o
GS
C
= 3.5 V
= 3 V
P
s
5
4
3
0.001
0.01
0.1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
40
30
20
10
60
10
1
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
2
Figure 6.
V
V
GS
GS
= 3.5 V
= 0 V
V
T
0.2
SD
J
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
= 150
V
On-Resistance vs Gate to
GS
10
Source Voltage
Source to Drain Diode
4
,
I
D
GATE TO SOURCE VOLTAGE (V)
o
I
D
= 13.3 A
C
0.4
,
DRAIN CURRENT (A)
0.6
20
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
T
V
J
V
J
GS
= 125
GS
= 25
= 6 V
= 4 V
0.8
o
o
C
C
T
J
30
T
= -55
8
J
V
www.fairchildsemi.com
V
= 25
GS
GS
1.0
o
= 10 V
= 4.5 V
C
o
C
P
P
s
s
1.2
40
10