FDMC7692 Fairchild Semiconductor, FDMC7692 Datasheet - Page 4

• Manufacturer Part Number: FDMC7692
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7692

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 13.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1680pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.5 mOhms
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC7692 Rev.C
Typical Characteristics
0.01
0.1
10
20
10
50
10
Figure 7.
8
6
4
2
0
1
0.01
1
0.01
0
Figure 9.
I
D
Figure 11.
= 13.3 A
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
3
T
JA
= MAX RATED
= 25
V
Switching Capability
V
DD
= 125
Gate Charge Characteristics
DS
t
0.1
AV
Operating Area
o
, DRAIN to SOURCE VOLTAGE (V)
= 15 V
Unclamped Inductive
C
0.1
6
Q
, TIME IN AVALANCHE (ms)
o
g
C/W
Forward Bias Safe
, GATE CHARGE (nC)
DS(on)
V
DD
T
= 10 V
J
9
= 125
1
o
12
T
C
1
J
V
= 25 °C unless otherwise noted
DD
T
J
= 20 V
15
= 25
10
o
T
C
J
18
= 100
10
100
1 ms
10 ms
100 ms
1 s
10 s
DC
o
C
P
100
21
30
s
4
1000
3000
1000
100
0.5
100
10
50
40
30
20
10
Figure 10.
20
1
10
0
0.1
25
Figure 12.
-4
Figure 8.
SINGLE PULSE
R
T
Limited by Package
f = 1 MHz
V
R
A
T
Current vs Case Temperature
GS
JA
T
= 25
JC
10
= 0 V
V
= 125
= 5.0
GS
-3
o
V
C
50
DS
Maximum Continuous Drain
= 10 V
Power Dissipation
to Source Voltage
o
o
, DRAIN TO SOURCE VOLTAGE (V)
C/W
Capacitance vs Drain
C/W
T
10
Single Pulse Maximum
c
,
-2
CASE TEMPERATURE (
t, PULSE WIDTH (sec)
75
10
1
-1
V
GS
= 4.5 V
1
100
10
o
C )
C
C
125
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C
V
10
iss
oss
rss
GS
100
= 10 V
1000
150
30