FDS4435BZ_F085 Fairchild Semiconductor, FDS4435BZ_F085 Datasheet - Page 3

• Manufacturer Part Number: FDS4435BZ_F085
• Description: MOSFET P-CH 30V 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4435BZ_F085

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1845pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 26 mOhms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 8.8 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On- Resistance
50
40
30
20
10
50
40
30
20
10
Figure 1.
-75
0
0
Figure 5. Transfer Characteristics
0
1
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
-50
V
V
I
D
vs Junction Temperature
GS
DS
= -8.8A
= -10V
= -5V
-V
-V
-25
T
GS
DS
On-Region Characteristics
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
1
2
T
J
0
= 25
T
o
25
V
V
C
J
GS
GS
P
= 150
s
= -10V
= -5V
2
3
50
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
o
C
J
= 25°C unless otherwise noted
75
T
V
V
V
J
GS
GS
GS
=-55
= -4.5V
= -3.5V
100 125 150
= -4V
o
3
C )
4
o
C
P
s
4
5
3
0.0001
0.001
0.01
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
60
50
40
30
20
10
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
T
-V
= 0V
J
V
= 150
0.2
SD
-V
GS
10
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
GS
On-Resistance vs Gate to
= -3.5V
, GATE TO SOURCE VOLTAGE (V)
o
Source Voltage
4
Source to Drain Diode
C
V
V
I
-I
GS
D
GS
0.4
D
= -8.8A
, DRAIN CURRENT(A)
= -4V
= -10V
20
T
T
0.6
J
J
6
= 125
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
= 25
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
30
o
o
C
C
0.8
T
J
= -55
V
GS
8
T
V
J
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40
GS
o
= -5V
= 25
C
1.0
= -4.5V
o
C
P
P
s
s
1.2
50
10