FDS4435BZ_F085 Fairchild Semiconductor, FDS4435BZ_F085 Datasheet - Page 4

• Manufacturer Part Number: FDS4435BZ_F085
• Description: MOSFET P-CH 30V 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4435BZ_F085

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1845pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 26 mOhms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 8.8 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
Typical Characteristics
Figure 11. Maximum Continuous Drain
Figure 7.
10
10
20
10
8
6
4
2
0
8
6
4
2
0
1
0.01
Current vs Ambient Temperature
25
0
Figure 9.
R
I
D
T
JA
= -8.8A
= 50
Switching Capability
5
Gate Charge Characteristics
50
o
T
V
C/W
Unclamped Inductive
A
t
AV
DD
, AMBIENT TEMPERATURE (
0.1
V
, TIME IN AVALANCHE(ms)
T
Q
= -15V
GS
J
10
g
= 125
, GATE CHARGE(nC)
= -4.5V
75
V
o
DD
C
= -10V
15
T
T
V
J
1
J
100
GS
= 25°C unless otherwise noted
= 25
V
= -10V
DD
20
o
= -20V
C
o
C )
125
25
10
150
30
30
4
Figure 10.
4000
1000
0.01
100
100
10
10
10
10
10
10
0.1
10
1
-4
-5
-6
-7
-8
-9
0.1
0.1
0
Figure 8.
THIS AREA IS
V
LIMITED BY r
f = 1MHz
V
Figure 12.
DS
GS
= 0V
= 0V
Gate Leakage Current vs Gate to
5
-V
-V
-V
to Source Voltage
DS
GS
DS
Source Voltage
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
,
Capacitance vs Drain
, DRAIN TO SOURCE VOLTAGE (V)
GATE TO SOURCE VOLTAGE(V)
DS(on)
10
Forward Bias Safe
1
T
1
SINGLE PULSE
T
R
T
J
J
A
T
= 125
JA
= MAX RATED
= 25
T
J
15
= 125
= 25
o
o
C
C
o
o
C
C/W
20
10
C
C
C
iss
oss
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10
25
10ms
1s
10s
1ms
100ms
DC
100us
30
80
30