FDPF10N50UT Fairchild Semiconductor, FDPF10N50UT Datasheet - Page 2
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FDPF10N50UT
Manufacturer Part Number
FDPF10N50UT
Description
MOSFET N-CH 500V 8A TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDPF10N50UT.pdf
(9 pages)
Specifications of FDPF10N50UT
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.05 Ohm @ 4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1130pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDPF10N50UT
Manufacturer:
Fairchi/ON
Quantity:
17 405
FDP10N50U / FDPF10N50UT Rev. A-1
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 10mH, I
3: I
4: Pulse Test: Pulse width 300s, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
BV
BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
T
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
SD
Device Marking
Symbol
DSS
FDPF10N50UT
J
DSS
FDP10N50U
8A, di/dt 200A/s, V
AS
= 8A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
BV
FDPF10N50UT
FDP10N50U
G
DSS
= 25, Starting T
Device
Parameter
, Starting T
J
= 25°C
J
= 25°C
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250A, V
= 250A, Referenced to 25
/dt = 100A/s
= 25V
= 500V, V
= 400V, T
= 0V, I
= ±30V, V
= 20V, I
= 25V, V
= 400V, I
= 250V, I
= 0V, I
= V
= 10V, I
= 10V
DS
T
Test Conditions
, I
C
SD
SD
D
Reel Size
D
GS
= 25
D
2
GS
D
GS
D
= 4A
= 8A
= 8A
C
= 4A
GS
DS
= 250A
= 10A
= 10V
= 10A
= 125
= 0V
= 0V, T
o
-
-
= 0V
= 0V
C unless otherwise noted
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
-
-
Min.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.85
850
115
0.6
7.5
8.5
44
45
18
15
38
46
33
9
5
-
-
-
-
-
-
-
-
Quantity
Max.
±100
1130
1.05
13.5
102
250
155
www.fairchildsemi.com
5.0
1.6
40
86
76
25
24
32
8
50
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
pF
pF
pF
A
nA
ns
ns
ns
ns
ns
nC
A
A
V
V
V
S
o
C