FDPF10N50UT Fairchild Semiconductor, FDPF10N50UT Datasheet - Page 3
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FDPF10N50UT
Manufacturer Part Number
FDPF10N50UT
Description
MOSFET N-CH 500V 8A TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDPF10N50UT.pdf
(9 pages)
Specifications of FDPF10N50UT
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.05 Ohm @ 4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1130pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDPF10N50UT
Manufacturer:
Fairchi/ON
Quantity:
17 405
FDP10N50U / FDPF10N50UT Rev. A-1
Typical Performance Characteristics
2000
1500
1000
500
1.6
1.4
1.2
1.0
0.8
Figure 5. Capacitance Characteristics
20
10
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
1
0
0.1
0.1
0
V
GS
C
C
C
=
oss
rss
iss
15.0 V
10.0 V
V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
DS
Drain Current and Gate Voltage
V
, Drain-Source Voltage [V]
5
DS
I
D
,Drain-Source Voltage[V]
, Drain Current [A]
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
V
1
GS
10
= 10V
*Notes:
1. 250
2. T
*Note: T
C
= 25
(
C ds = shorted
s Pulse Test
15
*Note:
1. V
2. f = 1MHz
o
V
C
10
C
GS
= 25
GS
10
= 20V
= 0V
o
C
)
20
20
30
3
0.1
10
30
10
20
10
8
6
4
2
0
1
Figure 2. Transfer Characteristics
1
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.0
0
2
*Notes:
1. V
2. 250
V
DS
SD
, Body Diode Forward Voltage [V]
= 20V
s Pulse Test
V
0.5
Q
5
Variation vs. Source Current
GS
and Temperature
g
150
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
150
4
o
V
V
V
C
o
DS
DS
DS
C
= 100V
= 250V
= 400V
1.0
10
25
*Notes:
1. V
2. 250
o
25
C
*Note: I
6
o
GS
C
1.5
15
= 0V
s Pulse Test
D
= 8A
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2.0
20
8