FDMC7660S Fairchild Semiconductor, FDMC7660S Datasheet - Page 2

• Manufacturer Part Number: FDMC7660S
• Description: MOSFET N-CH 30V 8-PQFN
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMC7660S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 4325pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.
3. Starting T
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
the user's board design.
∆T
∆T
iss
oss
rss
g
g(TOT)
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1in
J
= 25
o
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C; N-ch: L = 1 mH, I
AS
Parameter
= 16 A, V
a. 53°C/W when mounted on
a 1 in
DD
2
2
= 27 V, V
T
pad of 2 oz copper
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
GS
= 10 V.
I
I
V
V
V
V
V
V
V
V
I
V
I
V
V
V
V
V
f = 1 MHz
D
D
F
D
DS
GS
DD
GS
GS
GS
GS
GS
GS
GS
GS
GS
DD
DS
= 20 A, di/dt = 300 A/µs
= 1 mA, V
= 1 mA, referenced to 25 °C
= 1 mA, referenced to 25 °C
= 24 V, V
= 0 V, I
= 0 V, I
= 20 V, V
= 15 V, V
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
2
DS
Test Conditions
, I
S
S
GS
D
D
D
= 20 A
= 1.9 A
D
D
GS
DS
GS
GEN
D
= 20 A
= 20 A,
= 1 mA
= 0 V
= 20 A
= 20 A, T
= 18 A
= 0 V
= 0 V
= 0 V,
= 6 Ω
V
I
D
DD
= 20 A
J
= 15 V
= 125 °C
(Note 2)
(Note 2)
b. 125°C/W when mounted on a
θJC
minimum pad of 2 oz copper
is guaranteed by design while R
Min
1.2
30
3250
1260
Typ
129
105
0.8
0.4
3.9
9.5
1.6
1.7
2.5
2.2
0.8
31
39
14
34
47
21
13
-3
5
5
4325
1680
θCA
2.95
Max
160
www.fairchildsemi.com
1.2
0.7
500
100
2.5
2.2
3.1
25
10
54
10
66
29
50
62
is determined by
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
V
S