FDMC7660S Fairchild Semiconductor, FDMC7660S Datasheet - Page 3

• Manufacturer Part Number: FDMC7660S
• Description: MOSFET N-CH 30V 8-PQFN
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMC7660S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 4325pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C
Typical Characteristics
200
150
100
200
150
100
50
1.6
1.4
1.2
1.0
0.8
0.6
50
Figure 3. Normalized On- Resistance
0
Figure 1.
0
0.0
-75
Figure 5. Transfer Characteristics
1
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
D
GS
-50
vs Junction Temperature
= 20 A
= 5 V
= 10 V
V
0.5
V
GS
T
V
DS
-25
On-Region Characteristics
J
GS
V
V
,
= 3.5 V
GS
,
GS
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
V
V
DRAIN TO SOURCE VOLTAGE (V)
GS
GS
= 3 V
= 4 V
2
V
= 4.5 V
0
= 10 V
GS
1.0
T
J
= 6 V
= 125
25
µ
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
C
50
T
1.5
J
= 25 °C unless otherwise noted
T
75
J
3
= -55
T
J
o
100 125 150
C )
= 25
2.0
o
C
o
C
µ
s
2.5
4
3
0.001
0.01
200
100
0.1
10
10
1
4
3
2
1
0
8
6
4
2
0
0.0
Figure 2.
Figure 4.
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
V
V
GS
GS
T
GS
J
= 0 V
V
= 3 V
= 125
= 4 V
0.2
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
On-Resistance vs Gate to
GS
o
50
Source Voltage
C
4
Source to Drain Diode
,
GATE TO SOURCE VOLTAGE (V)
T
V
I
0.4
D
J
GS
T
,
= 25
J
DRAIN CURRENT (A)
= 4.5 V
= -55
o
C
o
0.6
100
C
6
T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
T
V
= 25
V
J
GS
I
GS
D
= 125
= 20 A
= 3.5 V
µ
= 6 V
o
0.8
s
C
o
C
150
8
www.fairchildsemi.com
V
1.0
GS
= 10 V
µ
s
200
1.2
10