FCP16N60N Fairchild Semiconductor, FCP16N60N Datasheet - Page 4

• Manufacturer Part Number: FCP16N60N
• Description: MOSFET N-CH 600V 16A TO-220-3
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS™r

Specifications of FCP16N60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 199 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 2170pF @ 100V
• Power - Max: 134.4W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 170mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.17 Ohms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 134.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCP16N60N / FCPF16N60NT Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Maximum Drain Current
0.01
100
1.2
1.1
1.0
0.9
0.8
0.1
10
20
15
10
-100
1
5
0
25
1
Operation in This Area
is Limited by R
-50
_ FCP16N60N
vs. Temperature
50
T
T
vs. Case Temperature
V
J
C
, Junction Temperature
DS
, Case Temperature
, Drain-Source Voltage [V]
10
0
DS(on)
75
*Notes:
1. T
2. T
3. Single Pulse
50
C
J
= 150
= 25
DC
100
o
10ms
C
o
100
100
C
[
o
1ms
C
*Notes:
[
]
o
1. V
2. I
125
C
100 s
150
]
D
GS
= 1mA
= 0V
20 s
1000
200
150
(Continued)
4
0.01
Figure 8. On-Resistance Variation
Figure 10. Maximum Safe Operating Area
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
-100
1
1
Operation in This Area
is Limited by R
-50
T
vs. Temperature
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
_ FCPF16N60NT
10
0
DS(on)
*Notes:
1. T
2. T
3. Single Pulse
DC
50
C
J
= 150
= 25
10ms
o
C
o
100
100
C
1ms
*Notes:
[
1. V
2. I
100 s
o
C
D
150
]
GS
= 8A
20 s
www.fairchildsemi.com
= 10V
1000
200