FCP16N60N Fairchild Semiconductor, FCP16N60N Datasheet - Page 5
![MOSFET N-CH 600V 16A TO-220-3](/photos/5/30/53099/261-to-220-3_sml.jpg)
FCP16N60N
Manufacturer Part Number
FCP16N60N
Description
MOSFET N-CH 600V 16A TO-220-3
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet
1.FCP16N60N.pdf
(10 pages)
Specifications of FCP16N60N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
199 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
52.3nC @ 10V
Input Capacitance (ciss) @ Vds
2170pF @ 100V
Power - Max
134.4W
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
170mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
TO-220
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.17 Ohms
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
134.4 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCP16N60N
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FCP16N60N / FCPF16N60NT Rev. A1
Typical Performance Characteristics
0.005
0.01
0.01
0.1
0.1
5
1
2
1
10
10
Figure 12. Transient Thermal Response Curve _ FCP16N60N
Figure 13. Transient Thermal Response Curve _ FCPF16N60NT
0.5
0.2
0.05
0.01
Single pulse
-5
0.1
0.02
0.5
0.05
0.2
0.02
-5
0.1
0.01
Single pulse
10
-4
10
-4
10
-3
Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
(Continued)
10
10
-3
-2
5
10
-1
10
-2
*Notes:
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
P
1. Z
2. Duty Factor, D= t
3. T
DM
DM
1
JM
JM
JC
JC
- T
(t) = 3.5
(t) = 0.93
- T
C
C
10
t
t
1
= P
1
= P
t
-1
2
t
2
o
DM
DM
10
C/W Max.
o
C/W Max.
* Z
* Z
1
1
/t
/t
JC
JC
2
2
(t)
(t)
10
1
2
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