STD65N55LF3 STMicroelectronics, STD65N55LF3 Datasheet - Page 12

• Manufacturer Part Number: STD65N55LF3
• Description: MOSFET N-CH 55V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD65N55LF3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10877-2

Revision history
6
12/13
Revision history
Table 8.
20-Oct-2009
12-Oct-2010
Date
Revision history
Revision
1
2
First release.
Document status promoted from preliminary data to datasheet.
Doc ID 16371 Rev 2
Changes
STD65N55LF3