STD65N55LF3 STMicroelectronics, STD65N55LF3 Datasheet - Page 7
![MOSFET N-CH 55V 80A DPAK](/photos/29/5/290509/dpak_sml.jpg)
STD65N55LF3
Manufacturer Part Number
STD65N55LF3
Description
MOSFET N-CH 55V 80A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STD65N55LF3.pdf
(13 pages)
Specifications of STD65N55LF3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 5V
Input Capacitance (ciss) @ Vds
2200pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
80 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10877-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD65N55LF3
Manufacturer:
RFMD
Quantity:
3 107
STD65N55LF3
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
(norm)
V
GS(th)
V
(V)
0.75
0.65
0.55
0.85
0.45
0.6
(V)
0.95
1.2
1.0
0.8
0.2
V
0.4
10
GS
SD
6
2
8
4
0
0
-75
0
0
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
5
T
10
J
-25
=-55°C
10
20
V
15
25
DD
I
D
=27.5V
=65A
T
30
J
20
=175°C
75
40
25
125
T
50
30
J
=25°C
35
60
175
Doc ID 16371 Rev 2
AM08214v1
AM08216v1
AM08212v1
Q
T
I
J
g
SD
(°C)
(nC)
(A)
Figure 11. Normalized on resistance vs
R
DS(on)
1000
(norm)
(pF)
100
0.8
0.6
1.0
1.8
1.6
2.0
1.4
1.2
C
10
-75
0.1
Capacitance variations
temperature
-25
1
25
Electrical characteristics
V
I
GS
D
=32A
=10V
75
10
125
175
V
DS
AM08215v1
AM08213v1
(V)
T
Crss
Ciss
J
Coss
(°C)
7/13