STD18N55M5 STMicroelectronics, STD18N55M5 Datasheet - Page 4
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STD18N55M5
Manufacturer Part Number
STD18N55M5
Description
MOSFET N-CH 600V 14A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STD18N55M5.pdf
(22 pages)
Specifications of STD18N55M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Details
Other names
497-10955-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD18N55M5
Manufacturer:
LITTLEFUSE
Quantity:
24 000
Part Number:
STD18N55M5
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/22
Electrical characteristics
(T
Table 4.
Table 5.
1. C
2. C
V
Symbol
Symbol
C
C
R
C
V
(BR)DSS
when V
C
C
o(er)
I
I
C
DS(on)
C
o(tr)
GS(th)
Q
Q
= 25 °C unless otherwise specified)
R
DSS
GSS
Q
oss eq.
oss eq.
oss
oss
rss
iss
gs
gd
G
g
(1)
(2)
when V
DS
time related is defined as a constant equivalent capacitance giving the same charging time as C
energy related is defined as a constant equivalent capacitance giving the same stored energy as
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
increases from 0 to 80% V
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
DS
increases from 0 to 80% V
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
DSS
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
DS
DD
GS
GS
GS
DS
DS
DS
= 1 mA, V
DSS
= Max rating
= Max rating, T
= 100 V, f = 1 MHz,
= 0
= 0 to 440 V
= 10 V
= ± 25 V
= V
= 10 V, I
= 440 V, I
Figure
Test conditions
Test conditions
GS
, I
19)
GS
D
D
D
= 250 µA
= 6.5 A
= 0
= 6.5 A,
C
=125 °C
Min.
Min.
550
3
-
-
-
-
-
1352
Typ.
Typ.
0.18
3.7
1.7
6.3
38
98
35
31
14
4
Max.
Max.
0.24
100
100
1
5
-
-
-
-
-
oss
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
pF
V
V
Ω
Ω