STD18N55M5 STMicroelectronics, STD18N55M5 Datasheet - Page 8
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STD18N55M5
Manufacturer Part Number
STD18N55M5
Description
MOSFET N-CH 600V 14A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STD18N55M5.pdf
(22 pages)
Specifications of STD18N55M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Details
Other names
497-10955-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD18N55M5
Manufacturer:
LITTLEFUSE
Quantity:
24 000
Part Number:
STD18N55M5
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/22
Figure 14. Normalized gate threshold voltage
Figure 16. Switching losses vs gate resistance
V
GS(th)
1.00
0.90
0.80
(norm)
1.10
0.70
(μJ)
120
100
140
80
60
40
20
-50
E
0
0
vs temperature
(1)
-25
V
V
I
D
CL
GS
=9A
=400V
=10V
10
0
25
20
50
I
D
=250µA
75
30
100
Eon
40
T
Eoff
J
(°C)
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
AM08670v1
AM08673v1
R
G
(Ω)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
R
BV
DS(on)
(norm)
(norm)
0.93
1.07
1.03
0.99
0.97
0.95
1.05
1.01
DSS
2.1
1.9
1.5
1.3
1.1
0.7
1.7
0.9
0.5
-50
-50
temperature
-25
-25
0
0
V
I
D
I
GS
D
=6.5A
25
=1mA
=10V
25
50
VDSS
50
75
75
vs temperature
100
100
T
T
J
J
(°C)
(°C)
AM08671v1
AM08672v1