IXTH16N10D2 IXYS, IXTH16N10D2 Datasheet - Page 2

• Manufacturer Part Number: IXTH16N10D2
• Description: MOSFET N-CH 100V 16A TO-247
• Manufacturer: IXYS

Specifications of IXTH16N10D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 64 mOhm @ 8A, 0V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 16A
• Gate Charge (qg) @ Vgs: 225nC @ 5V
• Input Capacitance (ciss) @ Vds: 5700pF @ 25V
• Power - Max: 695W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vds, Max, (v): 100
• Id(on), Min, (a): 16
• Rds(on), Max, (?): 0.064
• Vgs(off), Max, (v): -4.0
• Ciss, Typ, (pf): 5700
• Crss, Typ, (pf): 940
• Qg, Typ, (nc): 225
• Pd, (w): 695
• Rthjc, Max, (ºc/w): 0.18
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe-Operating-Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
(T
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
DS
R
G
= 16A, V
= 8A, -di/dt = 100A/μs
= 100V, V
= 20V, I
= -10V, V
=
= 3.3Ω (External)
=
= 100V, I
ADVANCE TECHNICAL INFORMATION
+
+
5V, V
5V, V
GS
D
GS
= 8A, Note 1
DS
DS
DS
D
= -10V, Note 1
= 4.2A, T
= -10V
4,835,592
4,881,106
= 25V, f = 1MHz
= 50V, I
= 50V, I
D
D
4,931,844
5,017,508
5,034,796
C
= 8A
= 8A
= 75°C, tp = 5s
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
420
Min.
Characteristic Values
Min.
7
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
5700
1980
0.21
Typ.
0.80
940
340
225
126
0.88
8.50
205
Typ.
11
Typ.
45
43
70
22
Max.
0.18 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
1.30
Max.
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
W
S
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 (IXTT) Outline
TO-247 (IXTH) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
3 - Source
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
IXTH16N10D2
7,005,734 B2
7,063,975 B2
IXTT16N10D2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
2 - Drain
Tab - Drain
0.205 0.225
0.232 0.252
∅ P
2 - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216