IXTH16N10D2 IXYS, IXTH16N10D2 Datasheet - Page 4

• Manufacturer Part Number: IXTH16N10D2
• Description: MOSFET N-CH 100V 16A TO-247
• Manufacturer: IXYS

Specifications of IXTH16N10D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 64 mOhm @ 8A, 0V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 16A
• Gate Charge (qg) @ Vgs: 225nC @ 5V
• Input Capacitance (ciss) @ Vds: 5700pF @ 25V
• Power - Max: 695W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vds, Max, (v): 100
• Id(on), Min, (a): 16
• Rds(on), Max, (?): 0.064
• Vgs(off), Max, (v): -4.0
• Ciss, Typ, (pf): 5700
• Crss, Typ, (pf): 940
• Qg, Typ, (nc): 225
• Pd, (w): 695
• Rthjc, Max, (ºc/w): 0.18
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.3
1.2
1.1
1.0
0.9
0.8
60
50
40
30
20
10
0
-4.0
-50
-50
Fig. 7. Normalized R
V
I
V
-3.5
D
GS
DS
Fig. 11. Normalized Breakdown and Threshold
= 8A
= 20V
= 0V
-25
-25
-3.0
Voltages vs. Junction Temperature
0
0
-2.5
Fig. 9. Input Admittance
T
T
-2.0
J
J
25
25
- Degrees Centigrade
- Degrees Centigrade
DS(on)
T
V
J
-1.5
GS
= 125ºC
- 40ºC
V
- Volts
25ºC
50
GS(off)
50
vs. Junction Temperature
-1.0
@ V
DS
75
75
-0.5
= 25V
BV
0.0
DSX
100
100
@ V
0.5
GS
125
125
= - 5V
1.0
150
150
1.5
2.5
2.0
1.5
1.0
0.5
0.0
35
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0.3
0
0
V
V
DS
GS
Fig. 12. Forward Voltage Drop of Intrinsic Diode
= 20V
= -10V
5
Fig. 8. R
0.4
10
10
Fig. 10. Transconductance
T
DS(on)
J
T
0.5
= 25ºC
20
J
= 125ºC
vs. Drain Current
15
Normalized to I
T
T
J
J
I
I
D
D
V
= 125ºC
= 25ºC
SD
- Amperes
- Amperes
0.6
20
30
- Volts
T
J
= 125ºC
IXTH16N10D2
25
IXTT16N10D2
0.7
D
40
= 8A Value
V
T
GS
30
J
= - 40ºC
T
= 0V
J
125ºC
5V
= 25ºC
0.8
50
- - - -
25ºC
35
0.9
40
60