NTNUS3171PZT5G ON Semiconductor, NTNUS3171PZT5G Datasheet - Page 2

• Manufacturer Part Number: NTNUS3171PZT5G
• Description: MOSFET P-CH 20V 200MA SOT-1123
• Manufacturer: ON Semiconductor

Specifications of NTNUS3171PZT5G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 13pF @ 15V
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SOT-1123
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Forward Transconductance Gfs (max / Min): 0.26 s
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 150 A
• Power Dissipation: - 125 mW, - 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details

THERMAL RESISTANCE RATINGS
3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS, V
4. Switching characteristics are independent of operating junction temperatures
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t = 5 s (Note 3)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Source−Drain Diode Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Parameter
Parameter
GS
= 4.5 V (Note 4)
(T
J
= 25°C unless otherwise specified)
V
R
Symbol
V
t
(BR)DSS
C
t
C
d(OFF)
GS(TH)
DS(ON)
I
C
I
d(ON)
V
g
DSS
GSS
OSS
RSS
ISS
t
t
FS
SD
r
f
http://onsemi.com
V
V
V
GS
GS
GS
= 0 V, V
= 0 V, V
= 0 V, V
V
2
V
V
V
V
V
V
I
GS
V
V
GS
DS
V
D
V
GS
GS
GS
GS
GS
GS
GS
DS
f = 1 MHz, V
= −200 mA, R
= −4.5 V, I
= −5.0 V, I
= −4.5 V, V
= −1.2 V, I
= −2.5 V, I
= −1.8 V, I
= −1.5 V, I
Test Condition
DS
DS
= V
= 0 V, I
= 0 V, V
= 0 V, I
DS
Symbol
V
R
R
DS
= −5.0 V
= −5.0 V
DS
= −16 V
qJA
qJA
, I
= −15 V
S
D
D
GS
D
D
D
= −200 mA
D
D
D
DD
GS
= −250 mA
= −250 mA
= −100 mA
= −125 mA
= −1.0 mA
G
= ±5.0 V
= −50 mA
= −20 mA
= −10 mA
= 0 V
= −15 V,
= 2.0 W
2
, 1 oz Cu.
T
T
T
J
J
J
= 25°C
= 85°C
= 25°C
1000
Max
600
−0.4
−0.5
Min
−20
−0.7
0.26
Typ
196
145
2.0
2.6
3.4
4.0
6.0
3.4
1.6
13
30
56
−100
−200
±100
Max
−1.0
−1.4
−50
3.5
4.0
5.5
7.0
°C/W
Unit
Unit
nA
nA
pF
ns
W
V
V
S
V