NTNUS3171PZT5G ON Semiconductor, NTNUS3171PZT5G Datasheet - Page 4

• Manufacturer Part Number: NTNUS3171PZT5G
• Description: MOSFET P-CH 20V 200MA SOT-1123
• Manufacturer: ON Semiconductor

Specifications of NTNUS3171PZT5G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 13pF @ 15V
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SOT-1123
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Forward Transconductance Gfs (max / Min): 0.26 s
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 150 A
• Power Dissipation: - 125 mW, - 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details

18
16
14
12
10
8
6
4
2
0
0
C
C
rss
C
2
iss
oss
Figure 7. Capacitance Variation
DRAIN−TO−SOURCE VOLTAGE (V)
4
6
8
0.12
0.10
0.08
0.06
0.04
0.02
10
0
0
12
V
T
Figure 9. Diode Forward Voltage vs. Current
GS
J
= 25°C
= 0 V
14
V
TYPICAL CHARACTERISTICS
SD
0.2
, SOURCE−TO−DRAIN VOLTAGE (V)
V
T
16
J
GS
= 25°C
= 0 V
http://onsemi.com
18
0.4
20
4
1000
0.6
100
10
1
1
Figure 8. Resistive Switching Time Variation
V
I
V
D
DD
GS
= 200 mA
0.8
= 15 V
= 4.5 V
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
1
10
t
t
t
t
d(off)
f
d(on)
r
100