NTD4969N-1G ON Semiconductor, NTD4969N-1G Datasheet - Page 5

• Manufacturer Part Number: NTD4969N-1G
• Description: MOSFET N-CH 30V 41A IPAK-4
• Manufacturer: ON Semiconductor

Specifications of NTD4969N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 837pF @ 15V
• Power - Max: 1.38W
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 19 mOhms
• Forward Transconductance Gfs (max / Min): 36 s
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 12.7 A
• Power Dissipation: 1.38 W, 2.56 W, 26.3 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
0.01
1200
1000
1100
100
100
0.1
900
800
700
600
500
400
300
200
100
10
10
0.01
1
1
0
1
0
V
I
V
D
Figure 11. Maximum Rated Forward Biased
0 V < V
Single Pulse
T
DD
GS
C
= 15 A
= 25°C
= 15 V
= 10 V
V
Figure 9. Resistive Switching Time
DS
V
5
GS
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
, DRAIN−TO−SOURCE VOLTAGE (V)
< 10 V
R
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
G
Safe Operating Area
, GATE RESISTANCE (W)
C
10
rss
C
C
10
1
oss
iss
15
TYPICAL PERFORMANCE CURVES
20
10
V
T
J
GS
25
= 25°C
http://onsemi.com
10 ms
100 ms
t
t
t
t
1 ms
10 ms
dc
= 0 V
d(on)
f
d(off)
r
100
100
30
5
30
25
20
15
10
10
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
5
0
0
0.4
9
8
7
6
5
4
3
2
1
0
25
0
Figure 8. Gate−to−Source and Drain−to−Source
Figure 10. Diode Forward Voltage vs. Current
V
1
Figure 12. Maximum Avalanche Energy vs.
GS
Q
T
gs
2
J
= 0 V
, STARTING JUNCTION TEMPERATURE (°C)
V
0.5
50
3
SD
Starting Junction Temperature
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
4
Voltage vs. Total Charge
G
, TOTAL GATE CHARGE (nC)
Q
5
gd
0.6
75
6
7
T
J
8
Q
= 125°C
0.7
100
T
9
10
11
0.8
125
12
13
14
I
T
V
V
D
J
I
DD
GS
0.9
D
150
T
= 30 A
15
= 25°C
J
= 19 A
= 15 V
= 10 A
= 25°C
16
17
1.0
175
18