NTD4969N-1G ON Semiconductor, NTD4969N-1G Datasheet - Page 7
![MOSFET N-CH 30V 41A IPAK-4](/photos/5/60/56062/dpak_369d___01_sml.jpg)
NTD4969N-1G
Manufacturer Part Number
NTD4969N-1G
Description
MOSFET N-CH 30V 41A IPAK-4
Manufacturer
ON Semiconductor
Datasheet
1.NTD4969N-1G.pdf
(7 pages)
Specifications of NTD4969N-1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.4A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Input Capacitance (ciss) @ Vds
837pF @ 15V
Power - Max
1.38W
Mounting Type
Through Hole
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
19 mOhms
Forward Transconductance Gfs (max / Min)
36 s
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
12.7 A
Power Dissipation
1.38 W, 2.56 W, 26.3 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
9 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD4969N-1G
Manufacturer:
ON
Quantity:
12 500
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor and
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
SEATING PLANE
SEATING
PLANE
−T−
V
S
F
1
G
V
B
R
4
2
W
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
F
3
G
A
K
D
0.13 (0.005)
3 PL
B
R
J
M
A
K
T
D
C
3 PL
N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
PACKAGE DIMENSIONS
0.13 (0.005) W
USA/Canada
Phone: 421 33 790 2910
Phone: 81−3−5773−3850
3 IPAK, STRAIGHT LEAD
E
H
http://onsemi.com
J
CASE 369AC−01
H
CASE 369D−01
ISSUE O
ISSUE C
C
IPAK
7
E
Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
ANSI Y14.5M, 1982.
STYLE 2:
DIM
PIN 1. GATE
A
B
C
D
E
G
H
K
R
S
V
F
J
Z
2. DRAIN
3. SOURCE
4. DRAIN
NOTES:
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.350
0.180
0.025
0.035
0.155
1.. DIMENSIONING AND TOLERANCING
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
4. DIMENSION A DOES NOT INCLUDE
MIN
0.090 BSC
INCHES
PER ANSI Y14.5M, 1982.
DAMBAR POSITION.
DAMBAR POSITION OR MOLD GATE.
DIM
W
A
B
C
D
E
F
G
H
K
R
V
J
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.380
0.215
0.040
0.050
MAX
−−−
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.134
0.180
0.035
0.000
MIN
0.090 BSC
INCHES
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
8.89
4.45
0.63
0.89
3.93
MIN
0.245
0.265
0.094
0.035
0.023
0.043
0.040
0.023
0.142
0.215
0.050
0.010
2.29 BSC
MAX
MAX
6.35
6.73
2.38
0.88
0.58
1.14
1.01
0.58
9.65
5.45
1.01
1.27
−−−
0.000
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
3.40
4.57
0.89
NTD4969N/D
MIN
2.29 BSC
MAX
6.22
6.73
2.38
0.88
0.58
1.09
1.01
0.58
3.60
5.46
1.27
0.25