IPD60R750E6 Infineon Technologies

IPD60R750E6

Manufacturer Part Number

IPD60R750E6

Description

MOSFET N-CH 600V 5.7A TO252

Manufacturer

Infineon Technologies

Series

CoolMOS™r

Specifications of IPD60R750E6

Package / Case

Mounting Type

Power - Max

48W

Fet Type

MOSFET N-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

17.2nC @ 10V

Vgs(th) (max) @ Id

3.5V @ 170µA

Current - Continuous Drain (id) @ 25° C

5.7A

Drain To Source Voltage (vdss)

600V

Fet Feature

Standard

Rds On (max) @ Id, Vgs

750 mOhm @ 2A, 10V

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.68 Ohms

Drain-source Breakdown Voltage

650 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

5.7 A

Power Dissipation

48 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IPD60R750E6

Manufacturer:

INFINEON

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IPD60R750E6

Manufacturer:

INFINEON

Quantity:

12 500

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