IPA65R600E6 Infineon Technologies, IPA65R600E6 Datasheet - Page 17

• Manufacturer Part Number: IPA65R600E6
• Description: MOSFET N-CH 650V 7.3A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPA65R600E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 3.5V @ 210µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 100V
• Power - Max: 28W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.54 Ohms
• Drain-source Breakdown Voltage: 700 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7.3 A
• Power Dissipation: 28 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Packages: PG-TO220-3
• Vds (max): 650.0 V
• Package: TO-220 FullPAK
• Rds(on) @ Tj=25°c Vgs=10: 600.0 mOhm
• Id(max) @ Tc=25°c: 7.3 A
• Idpuls (max): 18.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

component described in this Data Sheet may be used in life-support devices or systems and/
or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons
may be endangered