IPA60R520E6 Infineon Technologies, IPA60R520E6 Datasheet - Page 8

• Manufacturer Part Number: IPA60R520E6
• Description: MOSFET N-CH 600V 8.1A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPA60R520E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 3.5V @ 230µA
• Gate Charge (qg) @ Vgs: 23.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 512pF @ 100V
• Power - Max: 29W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.47 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.1 A
• Power Dissipation: 29 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5
Final Data Sheet
Table 9
Table 10
Z
Power dissipation
TO-220
P
Max. transient thermal impedance
TO-220
(thJC)
tot
= f(
=f(tp); parameter: D=t
T
C
)
Electrical characteristics diagrams
p
/T
8
Power dissipation
TO-220 FullPAK
Z
P
Max. transient thermal impedance
TO-220 FullPAK
(thJC)
tot
= f(
=f(tp); parameter: D=t
600V CoolMOS™ E6 Power Transistor
T
C
)
Electrical characteristics diagrams
p
/T
Rev. 2.0, 2010-04-09
IPx60R520E6