IPP60R380E6 Infineon Technologies, IPP60R380E6 Datasheet - Page 4

• Manufacturer Part Number: IPP60R380E6
• Description: MOSFET N-CH 600V 10.6A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPP60R380E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10.6A
• Vgs(th) (max) @ Id: 3.5V @ 320µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 100V
• Power - Max: 83W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.34 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 10.6 A
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Packages: PG-TO220-3
• Vds (max): 600.0 V
• Package: TO-220
• Rds(on) @ Tj=25°c Vgs=10: 380.0 mOhm
• Id(max) @ Tc=25°c: 10.6 A
• Idpuls (max): 30.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2
at
Table 2
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation for
TO-220
Power dissipation for
TO-220 FullPAK
Operating and storage temperature
Mounting torque
TO-220
Mounting torque
TO-220 FullPAK
Continuous diode forward current
Diode pulse current
Reverse diode dv/dt
Maximum diode commutation
speed
1) Limited by
2) Pulse width
3) Identical low side and high side switch with identical
FinalData Sheet
T
j
= 25 °C, unless otherwise specified.
3)
Maximum ratings
Maximum ratings
T
t
j,max.
p
limited by
Maximum duty cycle D=0.75
2)
3)
2)
1)
T
j,max
Symbol
dv/dt
I
I
E
E
I
V
P
P
T
I
I
dv/dt
di
D
D,pulse
AR
S
S,pulse
j
AS
AR
GS
tot
tot
,T
f
/dt
stg
R
Min.
-
-
-
-
-
-
-20
-30
-
-
-55
-
-
-
-
G
4
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Values
600V CoolMOS™ E6 Power Transistor
Max.
10.6
30
210
0.32
1.8
50
20
30
83
31
150
60
9.2
30
15
500
6.7
50
Unit
V/ns
A
A
mJ
A
V
W
W
°C
Ncm
A
A
V/ns
A/µs
Note / Test Condition
T
T
T
I
(see table 21)
I
V
static
AC (f>1 Hz)
T
T
M3 and M3.5 screws
M2.5 screws
T
T
V
T
(see table 22)
D
D
C
C
C
DS
C
C
C
C
DS
j
=125 °C
=1.8 A,V
=1.8 A,V
= 25 °C
= 100°C
=25 °C
=25 °C
=25 °C
=25 °C
=25 °C
=0...480 V
=0...480 V,I
Rev. 2.0, 2010-04-09
Maximum ratings
IPx60R380E6
DD
DD
=50 V
=50 V
SD
I
D
,