IPA65R380E6 Infineon Technologies, IPA65R380E6 Datasheet
IPA65R380E6
Manufacturer Part Number
IPA65R380E6
Description
MOSFET N-CH 650V 10.6A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPA65R380E6.pdf
(17 pages)
Specifications of IPA65R380E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 3.2A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
10.6A
Vgs(th) (max) @ Id
3.5V @ 320µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
710pF @ 100V
Power - Max
31W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.34 Ohms
Drain-source Breakdown Voltage
700 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
10.6 A
Power Dissipation
31 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Packages
PG-TO220-3
Vds (max)
650.0 V
Package
TO-220 FullPAK
Rds(on) @ Tj=25°c Vgs=10
380.0 mOhm
Id(max) @ Tc=25°c
10.6 A
Idpuls (max)
29.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPA65R380E6
Manufacturer:
IR
Quantity:
20 000
Part Number:
IPA65R380E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPA65R380E6XKSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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IPA65R380E6 Summary of contents
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... Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...