IPP65R280E6 Infineon Technologies, IPP65R280E6 Datasheet - Page 17

• Manufacturer Part Number: IPP65R280E6
• Description: MOSFET N-CH 650V 13.8A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPP65R280E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 13.8A
• Vgs(th) (max) @ Id: 3.5V @ 440µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 100V
• Power - Max: 104W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: 700 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13.8 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Packages: PG-TO220-3
• Vds (max): 650.0 V
• Package: TO-220
• Rds(on) @ Tj=25°c Vgs=10: 280.0 mOhm
• Id(max) @ Tc=25°c: 13.8 A
• Idpuls (max): 39.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered