BF862,235 NXP Semiconductors, BF862,235 Datasheet - Page 5
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BF862,235
Manufacturer Part Number
BF862,235
Description
JFET N-CH 20V 25MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BF862215.pdf
(11 pages)
Specifications of BF862,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
N-Channel JFET
Voltage - Rated
20V
Current Rating
25mA
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
+ / - 20 V
Gate-source Cutoff Voltage
- 0.8 V
Gate-source Breakdown Voltage
- 20 V
Drain Current (idss At Vgs=0)
25 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
2000 Jan 05
handbook, halfpage
handbook, halfpage
N-channel junction FET
V
Fig.3
V
Fig.5
DS
DS
I DSS
(mS)
(mA)
y fs
= 8 V; T
= 8 V; T
60
50
40
30
20
40
30
20
10
0
0
0
Drain saturation current as a function of
Forward transfer admittance as a function
gate-source cut-off voltage; typical values.
of drain saturation current; typical values.
j
j
= 25 C.
= 25 C.
−0.5
10
20
−1
V GSoff (V)
I DSS (mA)
MCD811
MCD809
−1.5
30
5
handbook, halfpage
handbook, halfpage
V
Fig.4
V
Fig.6
DS
DS
(mS)
(μS)
g os
y fs
300
200
100
= 8 V; T
= 8 V; T
60
40
20
0
0
0
0
Common-source output conductance as a
function of drain saturation current;
typical values.
Forward transfer admittance as a function
of drain current; typical values.
j
j
= 25 C.
= 25 C.
10
10
20
20
Product specification
I DSS (mA)
I D (mA)
MCD810
MCD812
BF862
30
30