BF904,235 NXP Semiconductors, BF904,235 Datasheet - Page 5

MOSFET N-CH 7V 30MA SOT143

BF904,235

Manufacturer Part Number
BF904,235
Description
MOSFET N-CH 7V 30MA SOT143
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF904,235

Package / Case
TO-253-4 Reverse Pinning, SC-61
Transistor Type
N-Channel Dual Gate
Frequency
200MHz
Voltage - Rated
7V
Current Rating
30mA
Noise Figure
1dB
Current - Test
10mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
15 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
7V
Noise Figure (max)
2.8dB
Frequency (max)
1GHz
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.2@5V@Gate 1/1.5@5V@Gate 2pF
Output Capacitance (typ)@vds
1.3@5VpF
Reverse Capacitance (typ)
0.025@5VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
handbook, halfpage
N-channel dual gate MOS-FETs
V
f
Fig.6
unw
DS
(dB V)
Fig.4
V unw
(mS)
= 60 MHz; T
= 5 V; V
Y fs
120
110
100
40
30
20
10
90
80
0
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.20.
0
50
GG
Transfer admittance as a function of the
junction temperature; typical values.
= 5 V; f
amb
10
= 25 C; R
w
0
= 50 MHz.
20
G1
= 120 k
50
30
gain reduction (dB)
100
40
T ( C)
j
MRA771
MLD268
o
Rev. 06 - 13 November 2007
150
50
handbook, halfpage
V
T
reduction
f = 50 MHz.
j
DS
= 25 C.
gain
(dB)
(mA)
= 5 V.
Fig.7 Transfer characteristics; typical values.
Fig.5
I D
20
15
10
10
20
30
40
50
5
0
0
0
0
Typical gain reduction as a function of
the AGC voltage.
0.4
1
0.8
V
G2 S
2
BF904; BF904R
1.2
= 4 V
Product specification
3
3 V
1.6
V
V
AGC
G1 S
MRA769
2.5 V
2 V
1.5 V
1 V
MLD270
5 of 14
(V)
(V)
2.0
4

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