BF904A,215 NXP Semiconductors, BF904A,215 Datasheet
BF904A,215
Specifications of BF904A,215
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BF904A,215 Summary of contents
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... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...
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... NXP Semiconductors N-channel dual gate MOS-FETs FEATURES Specially designed for use supply voltage Short channel transistor with high transfer admittance to input capacitance ratio Low noise gain controlled amplifier GHz Superior cross-modulation performance during AGC. APPLICATIONS VHF and UHF applications with supply voltage such as television tuners and professional communications equipment ...
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... NXP Semiconductors N-channel dual gate MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current D I gate 1 current G1 I gate 2 current G2 P total power dissipation tot T storage temperature stg T operating junction temperature ...
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... NXP Semiconductors N-channel dual gate MOS-FETs THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point th j-s Note 1. Soldering point of the source lead. STATIC CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V gate 1-source breakdown voltage (BR)G1-SS V gate 2-source breakdown voltage (BR)G2-SS V forward source-gate 1 voltage ...
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... NXP Semiconductors N-channel dual gate MOS-FETs (mS Fig.5 Transfer admittance as a function of the junction temperature; typical values. 120 handbook, halfpage V unw (dB V) 110 100 MHz MHz 120 k unw amb G1 Fig.7 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.21. ...
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... NXP Semiconductors N-channel dual gate MOS-FETs 20 handbook, halfpage (mA) 16 1 1 Fig.9 Output characteristics; typical values. 40 handbook, halfpage y fs (mS Fig.11 Forward transfer admittance as a function of drain current; typical values. MLD269 handbook, halfpage (V) DS MLD272 handbook, halfpage 3 2 (mA) ...
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... NXP Semiconductors N-channel dual gate MOS-FETs 12 handbook, halfpage I D (mA G2 120 k (connected see Fig.21 Fig.13 Drain current as a function of gate 1 supply voltage (= V ); typical values handbook, halfpage I D (mA 120 k (connected see Fig.21 Fig.15 Drain current as a function of gate 2 voltage; typical values. MLD275 ...
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... NXP Semiconductors N-channel dual gate MOS-FETs 2 10 handbook, halfpage y is (mS mA amb Fig.17 Input admittance as a function of frequency; typical values (mS mA amb Fig.19 Forward transfer admittance and phase as a function of frequency; typical values. MLD277 (MHz mA Fig.18 Reverse transfer admittance and phase as ...
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... NXP Semiconductors N-channel dual gate MOS-FETs R GEN BF904A; BF904AR; BF904AWR V AGC 4 DUT 4 Fig.21 Cross-modulation test set-up. Rev November 2007 Product specification 450 nH C4 4.7 nF MLD171 ...
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... NXP Semiconductors N-channel dual gate MOS-FETs Table 1 Scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 40 0.989 3.2 100 0.987 7.9 200 0.976 15.7 300 0.972 23.3 400 0.947 30.6 500 0.925 37.6 600 0.905 44.4 700 0.883 50.9 800 0.861 57.0 900 ...
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... NXP Semiconductors N-channel dual gate MOS-FETs PACKAGE OUTLINES Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...
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... NXP Semiconductors N-channel dual gate MOS-FETs Plastic surface mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143R scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...
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... NXP Semiconductors N-channel dual gate MOS-FETs Plastic surface mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.4 0.7 mm 0.1 0.3 0.5 0.8 OUTLINE VERSION IEC SOT343R scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 REFERENCES ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors Revision history Revision history Document ID Release date BF904A_AR_AWR_N_4 20071113 • Modifications: Fig. 1 and 2 on page 2; Figure note changed BF904A_AR_AWR_3 19990514 (9397 750 05271) BF904A_AR_AWR_N_2 19990201 (9397 750 05234) BF904A_AR_AWR_N_1 19981130 (9397 750 04748) BF904A; BF904AR; BF904AWR Data sheet status ...