BF1204,135 NXP Semiconductors, BF1204,135 Datasheet - Page 2

• Manufacturer Part Number: BF1204,135
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1204,135

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30dB
• Voltage - Rated: 10V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
FEATURES
 Two low noise gain controlled amplifiers in a single
 Superior cross-modulation performance during AGC
 High forward transfer admittance
 High forward transfer admittance to input capacitance
APPLICATIONS
 Gain controlled low noise amplifiers for VHF and UHF
DESCRIPTION
The BF1204 is a combination of two equal dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected. Internal bias
circuits enable DC stabilization and a very good
cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against
excessive input voltage surges. The transistor has a
SOT363 micro-miniature plastic package.
QUICK REFERENCE DATA
Note
1. T
2010 Sep 16
Per MOS-FET; unless otherwise specified
V
I
P
y
C
C
NF
X
T
SYMBOL
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
D
package
ratio.
applications with 3 to 9 V supply voltage, such as digital
and analog television tuners and professional
communications equipment.
j
DS
tot
mod
Dual N-channel dual gate MOS-FET
ig1-s
rss
fs

s
is the temperature at the soldering point of the source lead.
drain-source voltage
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
PARAMETER
T
I
I
f = 1 MHz
f = 800 MHz
input level for k = 1% at 40 dB AGC 100
D
D
s
= 12 mA; f = 1 MHz
= 12 mA; f = 1 MHz
 102 C; note 1
CAUTION
2
CONDITIONS
PINNING - SOT363
handbook, halfpage
Marking code: L3*
Top view
1
6
PIN
1
2
3
4
5
6
Fig.1 Simplified outline and symbol.
5
2
4
3
gate 1 (a)
gate 2
gate 1 (b)
drain (b)
source
drain (a)



25




MIN.
g1 (a)
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
AMP
d (a)
DESCRIPTION
a



30
1.7
15
1.1
105

TYP.
Product specification
g2
s
10
30
200
40
2.2

1.8

150
MAX.
g1 (b)
BF1204
AMP
d (b)
b
MBL252
V
mA
mW
mS
pF
fF
dB
dBV
C
UNIT