BSS83,235 NXP Semiconductors, BSS83,235 Datasheet - Page 4

• Manufacturer Part Number: BSS83,235
• Description: MOSFET N-CH 10V 50MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BSS83,235

• Transistor Type: N-Channel
• Voltage - Rated: 10V
• Current Rating: 50mA
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Device mounted on a ceramic substrate of 8 mm
Drain-source breakdown voltage
Source-drain breakdown voltage
Drain-substrate breakdown voltage
Source-substrate breakdown voltage
Drain-source leakage current
Source-drain leakage current
Forward transconductance at f = 1 kHz
Gate-source threshold voltage
Drain-source ON-resistance
Gate-substrate zener voltages
Capacitances at f = 1 MHz
Switching times (see Fig.2)
amb
MOSFET N-channel enhancement switching transistor
V
V
V
V
V
V
V
V
I
V
V
V
V
V
V
Feed-back capacitance
Input capacitance
Output capacitance
V
D
GS
GD
GB
GB
GS
GD
DS
DS
GS
GS
GS
DB
DB
GS
DD
= 25 C unless otherwise specified
= 0,1 mA;
= 10 V; V
= V
= V
= V
= V
= V
= 0; I
= 0; I
= V
= V
= 5 V; V
= 10 V; V
= 3,2 V; V
= V
= 10 V; V
GS
SB
SB
BS
BD
BS
BD
BS
D
D
; V
= 0; I
= 0; I
= 5 V; I
= 2 V; V
= 15 V; V
= 5 V; I
= 2 V; V
= 10 nA; open source
= 10 nA; open drain
SB
SB
SB
SB
i
SB
= 5 V
= 0
= 0; I
= 0; I
= 0
G
G
= 6,8 V (see Fig.4)
= 10 A
= 10 A
D
D
DS
SD
D
= 10 nA
= 10 nA
DS
D
= 1 A
= 6,6 V
= 6,6 V
= 20 mA
= 10 V
Rev. 03 - 21 November 2007
10 mm
0,7 mm.
V
V
V
V
I
I
g
V
R
R
R
V
V
C
C
C
t
t
DSoff
SDoff
on
off
fs
(BR)DSX
(BR)SDX
(BR)DBO
(BR)SBO
GS(th)
Z(1)
Z(2)
DSon
DSon
DSon
rss
iss
oss
typ.
typ.
typ.
typ.
typ.
typ.
typ.
Product specification
12,5 V
12,5 V
120
0,1 V
2,0 V
0,6 pF
1,5 pF
1,0 pF
1,0 ns
5,0 ns
10 V
10 V
15 V
15 V
10 nA
10 nA
10 mS
15 mS
70
45
80
BSS83
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