BLF7G27L-75P,118 NXP Semiconductors, BLF7G27L-75P,118 Datasheet - Page 2

• Manufacturer Part Number: BLF7G27L-75P,118
• Description: TRANSISTOR PWR LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27L-75P,118

• Package / Case: SOT-1121A
• Transistor Type: LDMOS
• Frequency: 2.3GHz ~ 2.4GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 650mA
• Voltage - Test: 28V
• Power - Output: 12W
• Resistance Drain-source Rds (on): 0.29 Ohms
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 18 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF7G27L-75P_BLF7G27LS-75P
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF7G27L-75P (SOT1121A)
1
2
3
4
5
BLF7G27LS-75P (SOT1121B)
1
2
3
4
5
Type number
BLF7G27L-75P
BLF7G27LS-75P
Symbol
V
I
T
V
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
BLF7G27L-75P; BLF7G27LS-75P
Rev. 2 — 14 July 2010
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
earless flanged LDMOST ceramic package; 4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
-
Min
-
0.5
-
65
© NXP B.V. 2010. All rights reserved.
3
4
3
4
Max
65
+13
18
+150
225
Version
SOT1121A
SOT1121B
1
2
1
2
sym117
sym117
2 of 13
5
5
Unit
V
V
A
C
C