BLF7G27L-75P,118 NXP Semiconductors, BLF7G27L-75P,118 Datasheet - Page 3

• Manufacturer Part Number: BLF7G27L-75P,118
• Description: TRANSISTOR PWR LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27L-75P,118

• Package / Case: SOT-1121A
• Transistor Type: LDMOS
• Frequency: 2.3GHz ~ 2.4GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 650mA
• Voltage - Test: 28V
• Power - Output: 12W
• Resistance Drain-source Rds (on): 0.29 Ohms
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 18 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G27L-75P_BLF7G27LS-75P
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
T
The BLF7G27L-75P and BLF7G27LS-75P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
R
Symbol Parameter
V
V
I
I
g
Symbol
P
G
RL

ACPR
I
R
DSS
DSX
GSS
j
case
DS
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-c)
DS(on)
p
= 25
in
= 28 V; I
= 25
885k

C; per section unless otherwise specified.

drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Parameter
thermal resistance from junction to case
C; 2 sections combined unless otherwise specified; in a class-AB production test circuit.
Thermal characteristics
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
Dq
1
= 650 mA; P
All information provided in this document is subject to legal disclaimers.
= 2300 MHz; f
BLF7G27L-75P; BLF7G27LS-75P
Rev. 2 — 14 July 2010
L
2
= 75 W (CW); f = 2300 MHz.
= 2400 MHz; RF performance at V
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 3.5 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
Conditions
T
Conditions
P
P
P
P
D
case
DS
L(AV)
L(AV)
L(AV)
L(AV)
D
D
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 50 mA
= 2.5 A
= 28 V
= 80 C; P
= 0 V
= 12 W
= 12 W
= 12 W
= 12 W
DS
Power LDMOS transistor
= 28 V; I
L
= 10 W
Min Typ
65
1.3
-
-
-
-
-
Min Typ Max Unit
-
15.8 17
-
23
-
© NXP B.V. 2010. All rights reserved.
Dq
-
1.8
-
9.5
-
3.8
0.29
12
12 8
26
46 42
= 650 mA;
Typ
0.5
-
-
-
Max Unit
-
2.3
5
-
500
-
-
3 of 13
Unit
K/W
W
dB
dB
%
dBc
V
V
A
A
nA
S
