BLF7G20LS-140P,118 NXP Semiconductors, BLF7G20LS-140P,118 Datasheet - Page 7

• Manufacturer Part Number: BLF7G20LS-140P,118
• Description: TRANSISTOR PWR LDMOS ACC-4L
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20LS-140P,118

• Package / Case: SOT-1121B
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 850mA
• Voltage - Test: 28V
• Power - Output: 125W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 125W(Typ)
• Power Gain (typ)@vds: 17.5@28VdB
• Frequency (min): 1.805GHz
• Frequency (max): 1.88GHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 6.45S
• Drain Source Resistance (max): 150(Typ)@6.05Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 54%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF7G20LS-140P
Product data sheet
Fig 10. Single carrier W-CDMA power gain and drain
(dB)
G
19.5
18.5
17.5
16.5
p
19
18
17
0
V
efficiency as function of load power;
typical values
DS
= 28 V; I
G
η
D
p
20
7.6 Single carrier W-CDMA
7.7 Test circuit
Dq
= 1080 mA; f = 1880 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
Table 8.
For test circuit see
[1]
[2]
[3]
Component
C1, C2, C3
C4, C5
C6, C7, C8
C9, C10
C11
R1, R2
40
American Technical Ceramics type 100A or capacitor of same quality.
TDK or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
60
List of components
80
All information provided in this document is subject to legal disclaimers.
001aam408
Figure
P
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
L
(W)
100
Rev. 2 — 17 August 2010
12.
60
50
40
30
20
10
0
(%)
η
D
Fig 11. Single carrier W-CDMA ACPR at 5 MHz and at
ACPR
(dBc)
−20
−30
−40
−50
−60
−70
0
V
10 MHz as function of load power;
typical values
DS
= 28 V; I
15
BLF7G20LS-140P
Dq
30
= 1080 mA; f = 1880 MHz.
24 pF
4.7 μF
11 pF
Value
10 μF
470 μF; 63 V
12 Ω
45
Power LDMOS transistor
60
ACPR
ACPR
© NXP B.V. 2010. All rights reserved.
001aam409
75
[1]
[2]
[3]
[2]
10M
5M
P
L
(W)
Remarks
Philips 1206
90
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