BLF7G20LS-140P,118 NXP Semiconductors, BLF7G20LS-140P,118 Datasheet - Page 7
![TRANSISTOR PWR LDMOS ACC-4L](/photos/27/8/270810/sot1121b_sml.jpg)
BLF7G20LS-140P,118
Manufacturer Part Number
BLF7G20LS-140P,118
Description
TRANSISTOR PWR LDMOS ACC-4L
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G20L-140P112.pdf
(13 pages)
Specifications of BLF7G20LS-140P,118
Package / Case
SOT-1121B
Transistor Type
LDMOS
Frequency
1.81GHz ~ 1.88GHz
Gain
17.5dB
Voltage - Rated
65V
Current - Test
850mA
Voltage - Test
28V
Power - Output
125W
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.15 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
125W(Typ)
Power Gain (typ)@vds
17.5@28VdB
Frequency (min)
1.805GHz
Frequency (max)
1.88GHz
Package Type
CDFM
Pin Count
5
Forward Transconductance (typ)
6.45S
Drain Source Resistance (max)
150(Typ)@6.05Vmohm
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
54%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
BLF7G20LS-140P
Product data sheet
Fig 10. Single carrier W-CDMA power gain and drain
(dB)
G
19.5
18.5
17.5
16.5
p
19
18
17
0
V
efficiency as function of load power;
typical values
DS
= 28 V; I
G
η
D
p
20
7.6 Single carrier W-CDMA
7.7 Test circuit
Dq
= 1080 mA; f = 1880 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
Table 8.
For test circuit see
[1]
[2]
[3]
Component
C1, C2, C3
C4, C5
C6, C7, C8
C9, C10
C11
R1, R2
40
American Technical Ceramics type 100A or capacitor of same quality.
TDK or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
60
List of components
80
All information provided in this document is subject to legal disclaimers.
001aam408
Figure
P
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
L
(W)
100
Rev. 2 — 17 August 2010
12.
60
50
40
30
20
10
0
(%)
η
D
Fig 11. Single carrier W-CDMA ACPR at 5 MHz and at
ACPR
(dBc)
−20
−30
−40
−50
−60
−70
0
V
10 MHz as function of load power;
typical values
DS
= 28 V; I
15
BLF7G20LS-140P
Dq
30
= 1080 mA; f = 1880 MHz.
24 pF
4.7 μF
11 pF
Value
10 μF
470 μF; 63 V
12 Ω
45
Power LDMOS transistor
60
ACPR
ACPR
© NXP B.V. 2010. All rights reserved.
001aam409
75
[1]
[2]
[3]
[2]
10M
5M
P
L
(W)
Remarks
Philips 1206
90
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