BLF7G20LS-140P,118 NXP Semiconductors, BLF7G20LS-140P,118 Datasheet - Page 9

• Manufacturer Part Number: BLF7G20LS-140P,118
• Description: TRANSISTOR PWR LDMOS ACC-4L
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20LS-140P,118

• Package / Case: SOT-1121B
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 850mA
• Voltage - Test: 28V
• Power - Output: 125W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 125W(Typ)
• Power Gain (typ)@vds: 17.5@28VdB
• Frequency (min): 1.805GHz
• Frequency (max): 1.88GHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 6.45S
• Drain Source Resistance (max): 150(Typ)@6.05Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 54%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
8. Package outline
Fig 14. Package outline SOT1121B
BLF7G20LS-140P
Product data sheet
Earless flanged LDMOST ceramic package; 4 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1121B
Outline
version
(1)
max
nom
max
nom
min
min
0.187
0.136
4.75
3.45
A
H
A
U
0.155
0.145
3.94
3.68
2
b
0.007
0.003
0.18
0.08
IEC
c
20.02
19.61
0.788
0.772
D
1
3
19.96
19.66
0.786
0.774
D
1
JEDEC
8.89
0.35
All information provided in this document is subject to legal disclaimers.
e
0.375
0.365
D
U
H
9.53
9.27
D
e
References
1
1
1
E
Rev. 2 — 17 August 2010
0.375
0.365
0
9.53
9.27
E
1
0.045
0.035
b
1.14
0.89
JEITA
F
2
4
scale
19.94
18.92
0.785
0.745
5
H
5
12.83
12.57
0.505
0.495
w
H
3
1
10 mm
0.067
0.057
D
1.70
1.45
Q
w
2
20.70
20.45
0.815
0.805
F
U
1
D
BLF7G20LS-140P
9.91
9.65
0.39
0.38
U
2
0.51
0.02
w
European
projection
2
E
0.25
0.01
Power LDMOS transistor
w
1
3
Q
© NXP B.V. 2010. All rights reserved.
c
Issue date
09-10-12
09-12-14
sot1121b_po
E
SOT1121B
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