BLF7G20L-160P,112 NXP Semiconductors, BLF7G20L-160P,112 Datasheet - Page 2

• Manufacturer Part Number: BLF7G20L-160P,112
• Description: TRANSISTOR PWR LDMOS SOT1121
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-160P,112

• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Package / Case: SOT-1121A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF7G20L-160P_7G20LS-160P
Objective data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF7G20L-160P (SOT1121A)
1
2
3
4
5
BLF7G20LS-160P (SOT1121B)
1
2
3
4
5
Type number
BLF7G20L-160P
BLF7G20LS-160P -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
Description
BLF7G20L-160P; BLF7G20LS-160P
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
Rev. 01 — 22 June 2010
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
earless flanged LDMOST ceramic package; 4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
3
4
3
4
Max
65
+13
<tbd>
+150
200
Version
SOT1121A
SOT1121B
1
2
1
2
sym117
sym117
5
5
Unit
V
V
A
°C
°C
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