BLF7G20L-160P,112 NXP Semiconductors, BLF7G20L-160P,112 Datasheet - Page 6

• Manufacturer Part Number: BLF7G20L-160P,112
• Description: TRANSISTOR PWR LDMOS SOT1121
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-160P,112

• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Package / Case: SOT-1121A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BLF7G20L-160P_7G20LS-160P
Objective data sheet
Document ID
BLF7G20L-160P_7G20LS-160P v.1
Revision history
Table 8.
Acronym
CW
EDGE
ESD
IS-95
LDMOS
LDMOST
RF
SMD
VSWR
W-CDMA
Abbreviations
BLF7G20L-160P; BLF7G20LS-160P
All information provided in this document is subject to legal disclaimers.
Description
Continuous Wave
Enhanced Data rates for GSM Evolution
ElectroStatic Discharge
Interim Standard 95
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Radio Frequency
Surface Mounted Device
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Release date
20100622
Rev. 01 — 22 June 2010
Data sheet status
Objective data sheet
Change notice
-
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
Supersedes
-
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