BLF7G20L-250P,118 NXP Semiconductors, BLF7G20L-250P,118 Datasheet - Page 10

• Manufacturer Part Number: BLF7G20L-250P,118
• Description: TRANSISTOR PWR LDMOS SOT539
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-250P,118

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 37.54A
• Current - Test: 1.9A
• Voltage - Test: 28V
• Power - Output: 70W
• Resistance Drain-source Rds (on): 0.078 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
Fig 14. Package outline SOT539B
BLF7G20L-250P_7G20LS-250P
Product data sheet
Earless flanged balanced LDMOST ceramic package; 4 leads
Dimensions
Note
1. millimeter dimensions are derived from the original inch dimensions.
mm
mm
Unit
SOT539B
Outline
version
(1)
max
nom
max
nom
min
min
H
0.185
0.165
L
4.7
4.2
A
U
A
11.81
11.56
0.465
0.455
2
b
0.007
0.004
0.18
0.10
IEC
c
31.55
30.94
1.242
1.218
D
31.52
30.96
1.241
1.219
D
1
1
3
BLF7G20L-250P; BLF7G20LS-250P
JEDEC
0.374
0.366
All information provided in this document is subject to legal disclaimers.
9.5
9.3
E
References
0.375
0.365
9.53
9.27
E
D
U
H
1
D
5
e
1
1
1
Rev. 3 — 1 March 2011
13.72
0
0.54
e
JEITA
0.069
0.059
1.75
1.50
scale
F
2
4
b
5
17.12
16.10
0.674
0.634
H
10 mm
25.53
25.27
1.005
0.995
H
1
0.137
0.117
3.48
2.97
w
L
3
D
0.089
0.079
F
2.26
2.01
Q
w
2
32.77
32.13
1.275
1.265
U
D
1
European
projection
10.29
10.03
0.405
0.395
U
Power LDMOS transistor
2
E
1
0.25
0.01
w
2
Q
© NXP B.V. 2011. All rights reserved.
0.25
0.01
w
3
c
Issue date
10-02-02
11-02-17
sot539b_po
E
SOT539B
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