BLF7G20L-250P,118 NXP Semiconductors, BLF7G20L-250P,118 Datasheet - Page 6

• Manufacturer Part Number: BLF7G20L-250P,118
• Description: TRANSISTOR PWR LDMOS SOT539
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-250P,118

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 37.54A
• Current - Test: 1.9A
• Voltage - Test: 28V
• Power - Output: 70W
• Resistance Drain-source Rds (on): 0.078 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
BLF7G20L-250P_7G20LS-250P
Product data sheet
Fig 6.
(dB)
G
(1) f = 1805 MHz.
(2) f = 1845 MHz.
(3) f = 1880 MHz.
p
19
18
17
16
15
14
0
Power gain as a function of average output
power; typical values
7.4 One tone CW
100
V
DS
= 28 V; I
(1)
(2)
(3)
200
Dq
P
BLF7G20L-250P; BLF7G20LS-250P
L(AV)
= 1900 mA.
All information provided in this document is subject to legal disclaimers.
001aal949
(W)
300
Rev. 3 — 1 March 2011
Fig 7.
(%)
η
(1) f = 1805 MHz.
(2) f = 1845 MHz.
(3) f = 1880 MHz.
D
50
40
30
20
10
0
0
Efficiency as a function of average output
power; typical values
20
40
60
(1)
(2)
(3)
Power LDMOS transistor
80
100
© NXP B.V. 2011. All rights reserved.
120
001aal947
P
L(AV)
(W)
140
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